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Home › Resources › Tools › MOSFet › Reviews

This resource has a 7.6 Ranking

Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›

Usage Stats
Total: updated 23 May 2013
Users:	4132
Jobs:	61133
Avg. exec. time:	6 mins

Reviews & Citations
Google/IEEE: updated 22 Apr 2010
Avg. Review:	4.0 out of 5 stars
Citations:	3

Intermediate-Advanced

Difficulty Level		Target Audience
	K-12	Middle/High School
	Easy	Freshmen/Sophomores
	Intermediate	Juniors/Seniors
	Advanced	Graduate Students
	Expert	PhD Experts

4132 users, detailed usage

980 users in 99 classes

14 questions (Ask a question)

5 review(s) (Review this)

1 wish(es) (Add a new wish)

MOSFet

By Shaikh S. Ahmed¹, Saumitra Raj Mehrotra², Matteo Mannino², Gerhard Klimeck², Dragica Vasileska³, Xufeng Wang², Himadri Pal², Gloria Wahyu Budiman²

1. Southern Illinois University Carbondale 2. Purdue University 3. Arizona State University

Simulates the current-voltage characteristics for bulk, SOI, and double-gate Field Effect Transistors (FETs)

You must login before you can run this tool.

Version 1.8.5 - published on 01 Nov 2011

doi:10.4231/D30V89G8N cite this

This tool is closed source.

First-Time User Guide View All Supporting Documents

See also

Recommendations

Reviews

Anonymous @ 06:10 AM on 19 Apr, 2008

5.0 out of 5 stars

No comment.

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0 Like 2 Dislike

Haydar MAHMOUD @ 01:11 AM on 09 Apr, 2008

2.0 out of 5 stars

this simulator is not used for real MOSFET designing, because it lacks the dynamic property implemented by BTE and it doesn’t take into account the QM effects.

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0 Like 0 Dislike

Haydar MAHMOUD @ 01:10 AM on 09 Apr, 2008

2.0 out of 5 stars

this simulator is not used for real MOSFET designing, because it lacks the the dynamic simulation implemented by BTE and doesn’t take into account the QM effects.

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1 Like 0 Dislike

Anonymous @ 08:44 PM on 12 Oct, 2006

5.0 out of 5 stars

A comprehensive device simulator

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reza @ 02:41 PM on 30 Nov, 2005

5.0 out of 5 stars

No comment.

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