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MOSFet

By Shaikh S. Ahmed1, Saumitra Raj Mehrotra2, SungGeun Kim2, Matteo Mannino2, Gerhard Klimeck2, Dragica Vasileska3, Xufeng Wang2, Himadri Pal2, Gloria Wahyu Budiman2

1. Southern Illinois University Carbondale 2. Purdue University 3. Arizona State University

Simulates the current-voltage characteristics for bulk, SOI, and double-gate Field Effect Transistors (FETs)

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Version 1.8.7 - published on 29 Jul 2014

doi:10.4231/D3Q23R14Z cite this

This tool is closed source.

First-Time User Guide View All Supporting Documents

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  1. 0 Like 0 Dislike

    Anonymous

    5.0 out of 5 stars

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  2. 0 Like 2 Dislike

    Haydar MAHMOUD

    2.0 out of 5 stars

    this simulator is not used for real MOSFET designing, because it lacks the dynamic property implemented by BTE and it doesn’t take into account the QM effects.

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    Anonymous

    5.0 out of 5 stars

    A comprehensive device simulator

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  4. 0 Like 0 Dislike

    reza

    5.0 out of 5 stars

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