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MOSFet

By Shaikh S. Ahmed1, Saumitra Raj Mehrotra2, SungGeun Kim2, Matteo Mannino2, Gerhard Klimeck2, Dragica Vasileska3, Xufeng Wang2, Himadri Pal2, Gloria Wahyu Budiman2

1. Southern Illinois University Carbondale 2. Purdue University 3. Arizona State University

Simulates the current-voltage characteristics for bulk, SOI, and double-gate Field Effect Transistors (FETs)

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Version 1.8.7 - published on 29 Jul 2014

doi:10.4231/D3Q23R14Z cite this

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Version Released DOI Handle Published
1.8.7 29 Jul 2014 doi:10.4231/D3Q23R14Z yes
1.8.6 07 Jan 2014 doi:10.4231/D3WW7704N no
1.8.5 01 Nov 2011 doi:10.4231/D30V89G8N no
1.8.4 21 Sep 2011 doi:10.4231/D3000005J no
1.8.3 14 Sep 2011 doi:10.4231/D37H1DM59 no
1.8.2 08 Sep 2011 doi:10.4231/D3RF5KF63 no
1.8.1 12 Apr 2011 doi:10.4231/D3M61BP7N no
1.8 03 Jan 2011 doi:10.4231/D3S756K0P no
1.7 30 Nov 2010 doi:10.4231/D3B56D44X no
1.6 03 Nov 2010 doi:10.4231/D3NK3649N no
1.5 31 Mar 2010 doi:10.4231/D3WM13T2R no
1.4 13 Jul 2009 doi:10.4231/D32V2C916 no
1.3.1 23 Jun 2009 doi:10.4231/D3K06X109 no
1.3 10 Jun 2009 doi:10.4231/D33X83K3Q no
1.2.2 21 Jan 2009 doi:10.4231/D3NC5SC1N no
1.22 27 Oct 2008 doi:10.4231/D3QF8JJ3D no
1.21 17 Oct 2008 doi:10.4231/D3RF5KF44 no
1.2 16 Oct 2008 doi:10.4231/D30Z70W41 no
1.11 06 Oct 2008 doi:10.4231/D31Z41S3S no
1.1 11 Feb 2008 doi:10.4231/D3TD9N73K no
1.0 07 Oct 2005 doi:10.4231/D3Z60C178 no

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