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MOSFet

Simulates the current-voltage characteristics for bulk and SOI Field Effect Transistors (FETs)

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Archive Version 1.0
Published on 07 Oct 2005, unpublished on 11 Feb 2008
Latest version: 1.8.7. All versions

doi:10.4231/D3Z60C178 cite this

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Abstract

Simulates the current-voltage characteristics for bulk and SOI Field Effect Transistors (FETs) for a variety of different device sizes, geometries, temperature and doping profiles. MOSFET lab is based on the Padre simulation tool developed by Mark Pinto, R. Kent Smith, and Ashraful Alam at Bell Labs.

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