MOSFet

Simulates the current-voltage characteristics for bulk and SOI Field Effect Transistors (FETs)

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Archive Version 1.1
Published on 11 Feb 2008, unpublished on 06 Oct 2008 All versions

doi:10.4231/D3TD9N73K cite this

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Abstract

Simulates the current-voltage characteristics for bulk and SOI Field Effect Transistors (FETs) for a variety of different device sizes, geometries, temperature and doping profiles. MOSFET lab is based on the Padre simulation tool developed by Mark Pinto, R. Kent Smith, and Ashraful Alam at Bell Labs.

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PADRE (Pisces And Device REplacement) developed by Mark Pinto at AT&T Bell Labs.

Cite this work

Researchers should cite this work as follows:

  • Matteo Mannino; Shaikh S. Ahmed; Gerhard Klimeck; Dragica Vasileska; Xufeng Wang; Himadri Pal (2017), "MOSFet," http://nanohub.org/resources/mosfet. (DOI: 10.4231/D3TD9N73K).

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