By Matteo Mannino1, Shaikh S. Ahmed2, Gerhard Klimeck1, Dragica Vasileska3, Xufeng Wang1, Himadri Pal1

1. Purdue University 2. Southern Illinois University Carbondale 3. Arizona State University

Simulates the current-voltage characteristics for bulk and SOI Field Effect Transistors (FETs)

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Archive Version 1.21
Published on 17 Oct 2008, unpublished on 27 Oct 2008
Latest version: 1.9.1. All versions

doi:10.4231/D3RF5KF44 cite this

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The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a device used to amplify or switch electronic signals. It is by far the most common field-effect transistor in both digital and analog circuits. The MOSFET is composed of a channel of n-type or p-type semiconductor material (see article on semiconductor devices), and is accordingly called an NMOSFET or a PMOSFET (also commonly nMOSFET, pMOSFET).

MOSFet tool simulates the current-voltage characteristics for bulk and SOI Field Effect Transistors (FETs) for a variety of different device sizes, geometries, temperature and doping profiles.

Teachnig Material and Exercises:

  • MOSFET Operation Description
  • MOSFET Exercises: Series Resistance, Punchthrough and Impact Ionization
  • SOI Exercise: Basic Operation of n-channel SOI Device
  • MOSFET lab is based on the Padre simulation tool developed by Mark Pinto, R. Kent Smith, and Ashraful Alam at Bell Labs.

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    PADRE (Pisces And Device REplacement) developed by Mark Pinto at AT&T Bell Labs.

    Cite this work

    Researchers should cite this work as follows:

    • Matteo Mannino; Shaikh S. Ahmed; Gerhard Klimeck; Dragica Vasileska; Xufeng Wang; Himadri Pal (2017), "MOSFet," (DOI: 10.4231/D3RF5KF44).

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