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By Matteo Mannino1, Shaikh S. Ahmed2, Gerhard Klimeck1, Dragica Vasileska3, Xufeng Wang1, Himadri Pal1

1. Purdue University 2. Southern Illinois University Carbondale 3. Arizona State University

Simulates the current-voltage characteristics for bulk and SOI Field Effect Transistors (FETs)

Launch Tool

This tool version is unpublished and cannot be run. If you would like to have this version staged, you can put a request through HUB Support.

Archive Version 1.22
Published on 27 Oct 2008, unpublished on 21 Jan 2009
Latest version: 1.8.7. All versions

doi:10.4231/D3QF8JJ3D cite this

This tool is closed source.



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The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a device used to amplify or switch electronic signals. It is by far the most common field-effect transistor in both digital and analog circuits. The MOSFET is composed of a channel of n-type or p-type semiconductor material (see article on semiconductor devices), and is accordingly called an NMOSFET or a PMOSFET (also commonly nMOSFET, pMOSFET).

MOSFet tool simulates the current-voltage characteristics for bulk and SOI Field Effect Transistors (FETs) for a variety of different device sizes, geometries, temperature and doping profiles.

Teachnig Material and Exercises:

  • MOSFET Operation Description
  • MOSFET Exercises: Series Resistance, Punchthrough and Impact Ionization
  • SOI Exercise: Basic Operation of n-channel SOI Device
  • MOSFET lab is based on the Padre simulation tool developed by Mark Pinto, R. Kent Smith, and Ashraful Alam at Bell Labs.

    Tags, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.