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MOSFet
Simulates the current-voltage characteristics for bulk and SOI Field Effect Transistors (FETs)
Launch Tool
Archive Version 1.22
Published on 27 Oct 2008, unpublished on 21 Jan 2009 All versions
doi:10.4231/D3QF8JJ3D cite this
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Abstract
The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a device used to amplify or switch electronic signals. It is by far the most common field-effect transistor in both digital and analog circuits. The MOSFET is composed of a channel of n-type or p-type semiconductor material (see article on semiconductor devices), and is accordingly called an NMOSFET or a PMOSFET (also commonly nMOSFET, pMOSFET).
MOSFet tool simulates the current-voltage characteristics for bulk and SOI Field Effect Transistors (FETs) for a variety of different device sizes, geometries, temperature and doping profiles.
Teachnig Material and Exercises:
MOSFET lab is based on the Padre simulation tool developed by Mark Pinto, R. Kent Smith, and Ashraful Alam at Bell Labs.
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PADRE (Pisces And Device REplacement) developed by Mark Pinto at AT&T Bell Labs.
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