Simulates the current-voltage characteristics for bulk and SOI Field Effect Transistors (FETs)

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Archive Version 1.4
Published on 13 Jul 2009 All versions

doi:10.4231/D32V2C916 cite this



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The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a device used to amplify or switch electronic signals. It is by far the most common field-effect transistor in both digital and analog circuits. The MOSFET is composed of a channel of n-type or p-type semiconductor material (see article on semiconductor devices), and is accordingly called an NMOSFET or a PMOSFET (also commonly nMOSFET, pMOSFET). MOSFet tool simulates the current-voltage characteristics for bulk and SOI Field Effect Transistors (FETs) for a variety of different device sizes, geometries, temperature and doping profiles. Teachnig Material and Exercises: Upgrades with subsequent versions:
  • 1.4: Fixed axes units. Added option for Energy balance transport
  • 1.3.1: Added status bar for running simulation.
  • 1.3: Dynamic contour plot replaces static MATLAB-driver contour plot. This feature fulfills this wish
MOSFET lab is based on the Padre simulation tool developed by Mark Pinto, R. Kent Smith, and Ashraful Alam at Bell Labs.

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PADRE (Pisces And Device REplacement) developed by Mark Pinto at AT&T Bell Labs.

Cite this work

Researchers should cite this work as follows:

  • Matteo Mannino; Shaikh S. Ahmed; Gerhard Klimeck; Dragica Vasileska; Xufeng Wang; Himadri Pal; Saumitra Raj Mehrotra; Gloria Wahyu Budiman (2017), "MOSFet," (DOI: 10.4231/D32V2C916).

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