By Himadri Pal1, Gerhard Klimeck1, Matteo Mannino1, Shaikh S. Ahmed2, Dragica Vasileska3, Saumitra Raj Mehrotra1, Xufeng Wang1, Sriraman Damodaran1, SungGeun Kim1

1. Purdue University 2. Southern Illinois University Carbondale 3. Arizona State University

Simulates the current-voltage characteristics for bulk and SOI Field Effect Transistors (FETs)

Launch Tool

This tool version is unpublished and cannot be run. If you would like to have this version staged, you can put a request through HUB Support.

Archive Version 1.5
Published on 31 Mar 2010
Latest version: 1.9.1. All versions

doi:10.4231/D3WM13T2R cite this

This tool is closed source.



Published on


The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a device used to amplify or switch electronic signals. It is by far the most common field-effect transistor in both digital and analog circuits. The MOSFET is composed of a channel of n-type or p-type semiconductor material (see article on semiconductor devices), and is accordingly called an NMOSFET or a PMOSFET (also commonly nMOSFET, pMOSFET).

MOSFet tool simulates the current-voltage characteristics for bulk and SOI Field Effect Transistors (FETs) for a variety of different device sizes, geometries, temperature and doping profiles.

Teachnig Material and Exercises:

MOSFET Operation Description

MOSFET Exercise: Long channel vs. short channel device

MOSFET Exercise: DIBL effect in short channel devices

MOSFET Exercises: Series Resistance, Punchthrough and Impact Ionization

SOI Exercise: Basic Operation of n-channel SOI Device

Upgrades with subsequent versions:

  1. 5: Improved meshing for Imapct Ionization simulations.
  2. 4: Fixed axes units. Added option for Energy balance transport
  3. 3.1: Added status bar for running simulation.
  4. 3: Dynamic contour plot replaces static MATLAB-driver contour plot. This feature fulfills this wish

MOSFET lab is based on the Padre simulation tool developed by Mark Pinto, R. Kent Smith, and Ashraful Alam at Bell Labs.

Powered by

PADRE (Pisces And Device REplacement) developed by Mark Pinto at AT&T Bell Labs.

Cite this work

Researchers should cite this work as follows:

  • Himadri Pal; Gerhard Klimeck; Matteo Mannino; Shaikh S. Ahmed; Dragica Vasileska; Saumitra Raj Mehrotra; Xufeng Wang; Sriraman Damodaran; SungGeun Kim (2017), "MOSFet," (DOI: 10.4231/D3WM13T2R).

    BibTex | EndNote