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This section is unavailable in an archive version of a tool. Consult the latest published version 1.8.6 for most current information.

MOSFet

By Matteo Mannino1, Shaikh S. Ahmed2, Gerhard Klimeck1, Dragica Vasileska3, Xufeng Wang1, Himadri Pal1, Saumitra Raj Mehrotra1, Gloria Wahyu Budiman1

1. Purdue University 2. Southern Illinois University Carbondale 3. Arizona State University

Simulates the current-voltage characteristics for bulk, SOI, and double-gate Field Effect Transistors (FETs)

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Archive Version 1.8.1
Published on 12 Apr 2011
Latest version: 1.8.6. All versions

doi:10.4231/D3M61BP7N cite this

This tool is closed source.

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Abstract

The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a device used to amplify or switch electronic signals. It is by far the most common field-effect transistor in both digital and analog circuits. The MOSFET is composed of a channel of n-type or p-type semiconductor material (see article on semiconductor devices), and is accordingly called an NMOSFET or a PMOSFET (also commonly nMOSFET, pMOSFET).


MOSFet tool simulates the current-voltage characteristics for bulk and SOI Field Effect Transistors (FETs) for a variety of different device sizes, geometries, temperature and doping profiles.

Teachnig Material and Exercises:

MOSFET Operation Description

MOSFET Exercise: Long channel vs. short channel device

MOSFET Exercise: DIBL effect in short channel devices

MOSFET Exercises: Series Resistance, Punchthrough and Impact Ionization

SOI Exercise: Basic Operation of n-channel SOI Device


Upgrades with subsequent versions:

  1. 8.1: Fixed minor bug for SOI-MOSFET simulations.
  2. 8: Fixed for oxide dielectric constant (was redundant parameter before).
  3. 6: Added Surface Charge-Vg plot for NMOS and PMOS.
  4. 5: Improved meshing for Imapct Ionization simulations.
  5. 4: Fixed axes units. Added option for Energy balance transport
  6. 3.1: Added status bar for running simulation.
  7. 3: Dynamic contour plot replaces static MATLAB-driver contour plot. This feature fulfills this wish

MOSFET lab is based on the Padre simulation tool developed by Mark Pinto, R. Kent Smith, and Ashraful Alam at Bell Labs.

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nanoHUB.org, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.