This tool version is unpublished and cannot be run. If you would like to have this version staged, you can put a request through HUB Support.
The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a device used to amplify or switch electronic signals. It is by far the most common field-effect transistor in both digital and analog circuits. The MOSFET is composed of a channel of n-type or p-type semiconductor material (see article on semiconductor devices), and is accordingly called an NMOSFET or a PMOSFET (also commonly nMOSFET, pMOSFET).
MOSFet tool simulates the current-voltage characteristics for bulk and SOI Field Effect Transistors (FETs) for a variety of different device sizes, geometries, temperature and doping profiles.
Teachnig Material and Exercises:
MOSFET Operation Description
MOSFET Exercise: Long channel vs. short channel device
MOSFET Exercise: DIBL effect in short channel devices
MOSFET Exercises: Series Resistance, Punchthrough and Impact Ionization
SOI Exercise: Basic Operation of n-channel SOI Device
Upgrades with subsequent versions:
- 8.2: Increased Lc (Lsd) limit to 100 um.
- 8.1: Fixed minor bug for SOI-MOSFET simulations.
- 8: Fixed for oxide dielectric constant (was redundant parameter before).
- 6: Added Surface Charge-Vg plot for NMOS and PMOS.
- 5: Improved meshing for Imapct Ionization simulations.
- 4: Fixed axes units. Added option for Energy balance transport
- 3.1: Added status bar for running simulation.
- 3: Dynamic contour plot replaces static MATLAB-driver contour plot. This feature fulfills this wish
MOSFET lab is based on the Padre simulation tool developed by Mark Pinto, R. Kent Smith, and Ashraful Alam at Bell Labs.