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Crystalline films grown epitaxially on substrates consisting of a different crystalline material are of considerable interest in optoelectronic devices and the semiconductor industry. The film and substrate have in general different lattice parameters. This lattice mismatch affects the quality of interfaces and can lead to very high densities of misfit dislocations. Here we study the strengthening of a thin film on a substrate. In particular we consider the motion of a dislocations gliding on its slip plane within the film and their interaction with the substrate.