Exercise: CV curves for MOS capacitors

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Abstract

This exercise demonstrates to the students how the low-frequency CV curves in MOS capacitors change with changing the gate workfunction, the oxide thickness and the dielectric constant. It also demonstrates the doping variation of the high-frequency CV curves.

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NSF

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Researchers should cite this work as follows:

  • Dragica Vasileska; Gerhard Klimeck (2008), "Exercise: CV curves for MOS capacitors," http://nanohub.org/resources/4855.

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