SCHRED: Exercise 2

By Dragica Vasileska1, Gerhard Klimeck2

1. Arizona State University 2. Purdue University

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Abstract

In this exercise students examine the doping dependence of the threshold voltage shift in MOS capacitors due to the quantum-mechanical charge description in the channel.

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Researchers should cite this work as follows:

  • www.eas.asu.edu/~vasilesk
  • Dragica Vasileska; Gerhard Klimeck (2008), "SCHRED: Exercise 2," http://nanohub.org/resources/4902.

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