SCHRED: Exercise 2

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In this exercise students examine the doping dependence of the threshold voltage shift in MOS capacitors due to the quantum-mechanical charge description in the channel.

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Researchers should cite this work as follows:

  • Dragica Vasileska; Gerhard Klimeck (2008), "SCHRED: Exercise 2,"

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  1. nanoelectronics
  2. quantum-mechanical threshold voltage shift
  3. ACUTE