Schred: Exercise 3
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Abstract
This exercise examines the degradation of the total gate capacitance with technology generation due to Maxwell-Boltzmann instead of Fermi-Dirac statistics, quantum-mechanical charge description and depletion of the polysilicon gates.
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Cite this work
Researchers should cite this work as follows:
www.eas.asu.edu/~vasilesk-
Dragica Vasileska; Gerhard Klimeck (2008), "Schred: Exercise 3," https://nanohub.org/resources/4904.