With this exercise students are familiarized with the punchthrough effect, the series resistance at the source and drain region and the importance of impact ionization at high gate and drain bias conditions.

Researchers should cite this work as follows:

• Dragica Vasileska; Gerhard Klimeck (2008), "MOSFET Exercise," https://nanohub.org/resources/4906.

1. ABACUS
2. ACUTE
3. impact ionization
4. MOS
5. MOSFET
6. nanoelectronics
7. punchthrough
8. series resistance