Support

Support Options

Submit a Support Ticket

 

MOSFET Exercise

By Dragica Vasileska1, Gerhard Klimeck2

1. Arizona State University 2. Purdue University

Download (PDF)

Licensed according to this deed.

Published on

Abstract

With this exercise students are familiarized with the punchthrough effect, the series resistance at the source and drain region and the importance of impact ionization at high gate and drain bias conditions.

Sponsored by

NSF

Cite this work

Researchers should cite this work as follows:

  • www.eas.asu.edu/~vasilesk
  • Dragica Vasileska; Gerhard Klimeck (2008), "MOSFET Exercise," http://nanohub.org/resources/4906.

    BibTex | EndNote

Tags

nanoHUB.org, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.