Cylindrical CNT MOSFET Simulator

Simulate 2-D electrons transport in CNTFET

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Archive Version 0.9.1
Published on 29 Sep 2008, unpublished on 30 Sep 2008 All versions

doi:10.4231/D32V2C90Q cite this



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Ballistic transport in carbon nanotube metal-oxide-semiconductor field-effect transistors (CNT-MOSFETs) is simulated using the Non-equilibrium Green's function formalism. A cylindrical transistor geometry with wrapped-around gate and doped source/drain regions are assumed. It should be noted that this code does NOT treat Schottky-barrier CNTFETs. Additional information on the device geometry and the simulation procedure is described in [1]. The code can readily simulate band-to-band tunneling in CNT-MOSFETs, as well as p-i-n type device architectures, by appropriately modifying the source/drain doping conditions [2,3]. This abstract is taken from the original one from the original MOSCNT MATLAB code

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NCN Rappture


Originally created by Jing Guo (Purdue University), 2003.
Revised by Siyu Koswatta (Purdue University) and Dmitri Nikonov (Intel), 2004.
Modified to be run under Rappture by Gloria Budiman, 2008.

Copyright of all codes contained in this archive by Purdue Research Foundation, 2003. See attached license which governs distribution, copying and modification.

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