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Cylindrical CNT MOSFET Simulator

Simulate 2-D electrons transport in CNTFET

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Archive Version 0.9.1
Published on 29 Sep 2008, unpublished on 30 Sep 2008
Latest version: 0.9.6. All versions

doi:10.4231/D32V2C90Q cite this

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Ballistic transport in carbon nanotube metal-oxide-semiconductor field-effect transistors (CNT-MOSFETs) is simulated using the Non-equilibrium Green’s function formalism. A cylindrical transistor geometry with wrapped-around gate and doped source/drain regions are assumed. It should be noted that this code does NOT treat Schottky-barrier CNTFETs. Additional information on the device geometry and the simulation procedure is described in 1. The code can readily simulate band-to-band tunneling in CNT-MOSFETs, as well as p-i-n type device architectures, by appropriately modifying the source/drain doping conditions 2,3.

This abstract is taken from the original one from the original MOSCNT MATLAB code

Tags, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.