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Ballistic transport in carbon nanotube metal-oxide-semiconductor field-effect transistors (CNT-MOSFETs) is simulated using the Non-equilibrium Green’s function formalism. A cylindrical transistor geometry with wrapped-around gate and doped source/drain regions are assumed. It should be noted that this code does NOT treat Schottky-barrier CNTFETs. Additional information on the device geometry and the simulation procedure is described in 1. The code can readily simulate band-to-band tunneling in CNT-MOSFETs, as well as p-i-n type device architectures, by appropriately modifying the source/drain doping conditions 2,3.
This abstract is taken from the original one from the original MOSCNT MATLAB code