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Cylindrical CNT MOSFET Simulator
Simulate 2-D electrons transport in CNTFET
Version 0.9.6 - published on 15 Aug 2014
doi:10.4231/D39C6S20D cite this
This tool is closed source.
Citations Non-affiliated (2) | Affiliated (3)
Non-affiliated authors
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Vishesh Dokania; Aminul Islam; Vivek Dixit; Shree Tiwari (2016), "Analytical Modeling Of Wrap-Gate Carbon Nanotube FET With Parasitic Capacitances And Density Of States," IEE Transactions on Electron Devices: pg. 1-6. 0018-9383. (DOI: 10.1109/TED.2016.2581119).
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S. Yamacli; M. Avci (2012), "Accurate SPICE Compatible CNT Interconnect And CNTFET Models For Circuit Design And Simulation," Mathematical And Computer Modelling, Elsevier, 58, 1: pg. 1-18. (DOI: doi:10.1016/j.mcm.2012.11.014).
Affiliated authors
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Chi-Shuen Lee; Eric Pop; Aaron Franklin; Wilfried Haensch; H.-S.P. Wong (2015), "A Compact Virtual-Source Model For Carbon Nanotube Field-Effect Transistors In The Sub-10-nm Regime-Part II Extrinsic Elements, Performance Assessment, And Design Optimization": pg. -.
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Chi-Shuen Lee; Eric Pop; Aaron Franklin; H.-S. Wong; Wilfried Haensch (2015), "A Compact Virtual-Source Model For Carbon Nanotube Field-Effect Transistors In The Sub-10-nm Regime-Part I Intrinsic Elements": pg. -.
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Gage Hills; Jie Zhang; Max Shulaker; Hai Wei; C-S Lee; Arjun Balasingam; H-S Wong; Subhasish Mitra (2015), "Rapid Co-optimization Of Processing And Circuit Design To Overcome Carbon Nanotube Variations," IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 34, 7: pg. 1082-1095. 0278-0070. (DOI: 10.1109/TCAD.2015.2415492).