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This version of NanoTCAD ViDES deals with Graphene Nanoribbon (GNR), Carbon Nanotube (CNT) and Silicon Nanowire FET with arbitrary gate geometry. In particular, transport in CNT is computed solving the pz-orbital tight-binding Hamiltonian, both on a mode and real space basis set. Transport in SNWT is instead computed within the effective mass approximation.
For what concerns GNR and CNT, devices with Schottky barriers and doped reservoirs can be both simulated.
Xufeng Wang (rappture interface)
Y. Yoon, G. Fiori, S. Hong, J. Guo and G. Iannaccone, "Performance Comparison of Graphene Nanoribbon FETs With Schottky Contacts and Doped Reservoirs", IEEE Transaction on Electron Devices, Vol. 55, pp. 2314-2323, 2008.
G. Fiori, G. Iannaccone, "Simulation of Graphene Nanoribbon Field-Effect Transistors", IEEE, Electron Device Letters, Vol. 28, Issue 8, pp. 760 - 762, 2007.
G. Fiori, G. Iannaccone, G. Klimeck, "A Three-Dimensional Simulation Study of the Performance of Carbon Nanotube Field-Effect Transistors With Doped Reservoirs and Realistic Geometry", IEEE Transaction on Electron Devices, Vol. 53, Issue 8, pp. 1782-1788, 2006.
G. Fiori, G. Iannaccone, G. Klimeck, "Coupled Mode Space Approach for the Simulation of Realistic Carbon Nanotube Field-Effect Transistors", IEEE Transaction on Nanotechnology, Vol.6, Issue 4, pp. 475-480, 2007.
G. Fiori, G. Iannaccone, "Three-Dimensional Simulation of One-Dimensional Transport in Silicon Nanowire Transistors", IEEE TRANSACTIONS ON NANOTECHNOLOGY,vol. 6,pp 524-529,2007.
Researchers should cite this work as follows: