By Gianluca Fiori1, Giuseppe Iannaccone2

1. University of Pisa 2. Universita' di Pisa

3D Poisson/NEGF solver for the simulation of Carbon nanotubes and Silicon Nanowire Transistors. More information available at

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Archive Version 1.0
Published on 17 Oct 2008, unpublished on 17 Oct 2008
Latest version: 1.22. All versions

doi:10.4231/D3MP4VM9W cite this

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NanoTCAD ViDES is a device simulator able to compute transport in nanoscale devices, solving self-consistently the 3D Poisson and quantum transport equation within the NEGF formalism. This version of NanoTCAD ViDES deals with Carbon Nanotube Field-Effect Transistors and Silicon Nanowire FET with arbitrary gate geometry. In particular, transport in CNT is computed solving the pz-orbital tight-binding Hamiltonian, both on a mode and real space basis set. Transport in SNWT is instead computed within the effective mass approximation.


Xufeng Wang (rappture interface)


G. Fiori, G. Iannaccone, G. Klimeck, "A Three-Dimensional Simulation Study of the Performance of Carbon Nanotube Field-Effect Transistors With Doped Reservoirs and Realistic Geometry", IEEE Transaction on Electron Devices, Vol. 53, Issue 8, pp. 1782-1788, 2006.

G. Fiori, G. Iannaccone, G. Klimeck, "Coupled Mode Space Approach for the Simulation of Realistic Carbon Nanotube Field-Effect Transistors", IEEE Transaction on Nanotechnology, Vol.6, Issue 4, pp. 475-480, 2007.

G. Fiori, G. Iannaccone, "Three-Dimensional Simulation of One-Dimensional Transport in Silicon Nanowire Transistors", IEEE TRANSACTIONS ON NANOTECHNOLOGY,vol. 6,pp 524-529,2007.

Cite this work

Researchers should cite this work as follows:

  • Gianluca Fiori; Giuseppe Iannaccone (2014), "NanoTCAD ViDES," (DOI: 10.4231/D3MP4VM9W).

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