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By Gianluca Fiori1, Giuseppe Iannaccone2

1. University of Pisa 2. Universita' di Pisa

3D Poisson/NEGF solver for the simulation of Carbon nanotubes and Silicon Nanowire Transistors. More information available at

Launch Tool

This tool version is unpublished and cannot be run. If you would like to have this version staged, you can put a request through HUB Support.

Archive Version 1.0
Published on 17 Oct 2008, unpublished on 17 Oct 2008
Latest version: 1.21. All versions

doi:10.4231/D3MP4VM9W cite this

This tool is closed source.



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NanoTCAD ViDES is a device simulator able to compute transport in nanoscale devices, solving self-consistently the 3D Poisson and quantum transport equation within the NEGF formalism.

This version of NanoTCAD ViDES deals with Carbon Nanotube Field-Effect Transistors and Silicon Nanowire FET with arbitrary gate geometry. In particular, transport in CNT is computed solving the pz-orbital tight-binding Hamiltonian, both on a mode and real space basis set. Transport in SNWT is instead computed within the effective mass approximation.

Tags, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.