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NanoTCAD ViDES

By Gianluca Fiori1, Giuseppe Iannaccone2

1. University of Pisa 2. Universita' di Pisa

3D Poisson/NEGF solver for the simulation of Carbon nanotubes and Silicon Nanowire Transistors. More information available at http://monteverdi.iet.unipi.it/~fiori/ViDES/ViDES.html

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Archive Version 1.1
Published on 17 Oct 2008, unpublished on 22 Oct 2008
Latest version: 1.21. All versions

doi:10.4231/D3GX44T54 cite this

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Abstract

NanoTCAD ViDES is a device simulator able to compute transport in nanoscale devices, solving self-consistently the 3D Poisson and quantum transport equation within the NEGF formalism.

This version of NanoTCAD ViDES deals with Carbon Nanotube Field-Effect Transistors and Silicon Nanowire FET with arbitrary gate geometry. In particular, transport in CNT is computed solving the pz-orbital tight-binding Hamiltonian, both on a mode and real space basis set. Transport in SNWT is instead computed within the effective mass approximation.

More information available at http://monteverdi.iet.unipi.it/~fiori/ViDES/ViDES.html

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