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This version of NanoTCAD ViDES deals with Carbon Nanotube Field-Effect Transistors and Silicon Nanowire FET with arbitrary gate geometry. In particular, transport in CNT is computed solving the pz-orbital tight-binding Hamiltonian, both on a mode and real space basis set. Transport in SNWT is instead computed within the effective mass approximation.
Xufeng Wang (rappture interface)
G. Fiori, G. Iannaccone, G. Klimeck, "A Three-Dimensional Simulation Study of the Performance of Carbon Nanotube Field-Effect Transistors With Doped Reservoirs and Realistic Geometry", IEEE Transaction on Electron Devices, Vol. 53, Issue 8, pp. 1782-1788, 2006.
G. Fiori, G. Iannaccone, G. Klimeck, "Coupled Mode Space Approach for the Simulation of Realistic Carbon Nanotube Field-Effect Transistors", IEEE Transaction on Nanotechnology, Vol.6, Issue 4, pp. 475-480, 2007.
G. Fiori, G. Iannaccone, "Three-Dimensional Simulation of One-Dimensional Transport in Silicon Nanowire Transistors", IEEE TRANSACTIONS ON NANOTECHNOLOGY,vol. 6,pp 524-529,2007.
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