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By Gianluca Fiori1, Giuseppe Iannaccone2

1. University of Pisa 2. Universita' di Pisa

3D Poisson/NEGF solver for the simulation of Graphene Nanoribbon, Carbon nanotubes and Silicon Nanowire Transistors.

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Archive Version 1.2
Published on 08 Jun 2009, unpublished on 08 Jul 2009
Latest version: 1.22. All versions

doi:10.4231/D3CF9J62Q cite this

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NanoTCAD ViDES is a device simulator able to compute transport in nanoscale devices, solving self-consistently the 3D Poisson and quantum transport equation within the NEGF formalism.

This version of NanoTCAD ViDES deals with Graphene Nanoribbon (GNR), Carbon Nanotube (CNT) and Silicon Nanowire FET with arbitrary gate geometry. In particular, transport in CNT is computed solving the pz-orbital tight-binding Hamiltonian, both on a mode and real space basis set. Transport in SNWT is instead computed within the effective mass approximation.

For what concerns GNR and CNT, devices with Schottky barriers and doped reservoirs can be both simulated.

You can DOWNLOAD the source code under the BSD 4-clause license and find more information at NanoTCAD ViDES website


Xufeng Wang (rappture interface)


Y. Yoon, G. Fiori, S. Hong, J. Guo and G. Iannaccone, "Performance Comparison of Graphene Nanoribbon FETs With Schottky Contacts and Doped Reservoirs", IEEE Transaction on Electron Devices, Vol. 55, pp. 2314-2323, 2008.

G. Fiori, G. Iannaccone, "Simulation of Graphene Nanoribbon Field-Effect Transistors", IEEE, Electron Device Letters, Vol. 28, Issue 8, pp. 760 - 762, 2007.

G. Fiori, G. Iannaccone, G. Klimeck, "A Three-Dimensional Simulation Study of the Performance of Carbon Nanotube Field-Effect Transistors With Doped Reservoirs and Realistic Geometry", IEEE Transaction on Electron Devices, Vol. 53, Issue 8, pp. 1782-1788, 2006.

G. Fiori, G. Iannaccone, G. Klimeck, "Coupled Mode Space Approach for the Simulation of Realistic Carbon Nanotube Field-Effect Transistors", IEEE Transaction on Nanotechnology, Vol.6, Issue 4, pp. 475-480, 2007.

G. Fiori, G. Iannaccone, "Three-Dimensional Simulation of One-Dimensional Transport in Silicon Nanowire Transistors", IEEE TRANSACTIONS ON NANOTECHNOLOGY,vol. 6,pp 524-529,2007.

Cite this work

Researchers should cite this work as follows:

  • Gianluca Fiori; Giuseppe Iannaccone (2014), "NanoTCAD ViDES," (DOI: 10.4231/D3CF9J62Q).

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