This tool version is unpublished and cannot be run. If you would like to have this version staged, you can put a request through HUB Support.
For what concerns GNR and CNT, devices with Schottky barriers and doped reservoirs can be both simulated.
You can the source code under the BSD 4-clause license and find more information at NanoTCAD ViDES website
Xufeng Wang (rappture interface)
Y. Yoon, G. Fiori, S. Hong, J. Guo and G. Iannaccone, "Performance Comparison of Graphene Nanoribbon FETs With Schottky Contacts and Doped Reservoirs", IEEE Transaction on Electron Devices, Vol. 55, pp. 2314-2323, 2008.
G. Fiori, G. Iannaccone, "Simulation of Graphene Nanoribbon Field-Effect Transistors", IEEE, Electron Device Letters, Vol. 28, Issue 8, pp. 760 - 762, 2007.
G. Fiori, G. Iannaccone, G. Klimeck, "A Three-Dimensional Simulation Study of the Performance of Carbon Nanotube Field-Effect Transistors With Doped Reservoirs and Realistic Geometry", IEEE Transaction on Electron Devices, Vol. 53, Issue 8, pp. 1782-1788, 2006.
G. Fiori, G. Iannaccone, G. Klimeck, "Coupled Mode Space Approach for the Simulation of Realistic Carbon Nanotube Field-Effect Transistors", IEEE Transaction on Nanotechnology, Vol.6, Issue 4, pp. 475-480, 2007.
G. Fiori, G. Iannaccone, "Three-Dimensional Simulation of One-Dimensional Transport in Silicon Nanowire Transistors", IEEE TRANSACTIONS ON NANOTECHNOLOGY,vol. 6,pp 524-529,2007.
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