This tool version is unpublished and cannot be run. If you would like to have this version staged, you can put a request through HUB Support.
This version of NanoTCAD ViDES deals with Graphene Nanoribbon (GNR), Carbon Nanotube (CNT) and Silicon Nanowire FET with arbitrary gate geometry. In particular, transport in CNT is computed solving the pz-orbital tight-binding Hamiltonian, both on a mode and real space basis set. Transport in SNWT is instead computed within the effective mass approximation.
For what concerns GNR and CNT, devices with Schottky barriers and doped reservoirs can be both simulated.