PN Junction: Long-Base Depletion Approximation

Depletion Approximation for a PN Junction

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Archive Version 2.0
Published on 08 Sep 2008, unpublished on 15 Jan 2009 All versions

doi:10.4231/D3SJ19Q66 cite this

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Abstract

The PN Junction: Long-Base Depletion Approximation tool is used to approximately calculate and then graph the distribution in an p- and n-type junction of:
  • Charge Density
  • Electric Field Intensity
  • Electrostatic Potential
  • Excess Carrier Concentration
  • Current Density
  • Current Density Amplitude
  • Depletion Width
  • Max Excess Hole Concentration
  • Max Excess Electrons Concentration
  • Junction Capacitance
  • 1 / C^2

References

  • Si and Ge intrinsic carrier values are based on Thurmond's paper: The Standard Thermodynamics Functions for the Formation of Electrons and Holes in Ge, Si, GaAs, and GaP
  • GaAs intrinsic carrier values are based on Blakemore's paper: Semiconducting and other major properties of gallium arsenide
  • For full details please see Chapter 5 of Streetman's and Banerjee's book " Solid State and Electronic Devices " Sixth Edition
  • The permittivity of semicondutors are given in:
    http://www.iue.tuwien.ac.at/phd/palankovski/node32.html

Cite this work

Researchers should cite this work as follows:

  • Nahil Sobh; Mohamed Mohamed (2014), "PN Junction: Long-Base Depletion Approximation," http://nanohub.org/resources/pnlongbasedda. (DOI: 10.4231/D3SJ19Q66).

    BibTex | EndNote

Tags

  1. nanoelectronics
  2. long base
  3. depletion approximation
  4. depletion
  5. np
  6. pn
  7. pn-junction
  8. np-junction
  9. NCN@Illinois Supported
  10. NCN Supported