PN Junction: Long-Base Depletion Approximation

Depletion Approximation for a PN Junction

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Archive Version 1.0
Published on 20 Aug 2008, unpublished on 08 Sep 2008 All versions

doi:10.4231/D38P5V87Q cite this

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Abstract

The PN Junction: Long-Base Depletion Approximation tool is used to approximatley calculate and then graph the distribution in an p- and n-type junction of: - Charge Density - Electric Field Intensity - Electrostatic Potential - Excess Carrier Concentration - Current Density - Current Density Amplitute - Depeletion Width - Max Excess Hole Concentration - Max Excess Electrons Concentration - Junction Capacitance - 1 / C^2

References

For full details please see Chapter 5 of Streetman's and Banerjee's book " Solid State and Electronic Devices " Sixth Edition.

Cite this work

Researchers should cite this work as follows:

  • Nahil Sobh; Mohamed Mohamed (2014), "PN Junction: Long-Base Depletion Approximation," http://nanohub.org/resources/pnlongbasedda. (DOI: 10.4231/D38P5V87Q).

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Tags

  1. nanoelectronics
  2. long base
  3. depletion approximation
  4. depletion
  5. np
  6. pn
  7. pn-junction
  8. np-junction
  9. NCN@Illinois Supported
  10. NCN Supported