| Category |
Tools |
| Abstract |
The NP Junction: Long-Base Depletion Approximation tool is used to approximately calculate, and then graph, the distribution in an n- and p-type junction of :
- Charge Density
- Electric Field Intensity
- Electrostatic Potential
- Excess Carrier Concentration
- Current Density
- Current Density Amplitude
- Depletion Width
- Max Excess Hole Concentration
- Max Excess Electrons Concentration
- Junction Capacitance
- 1 / C^2
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| References |
- Si and Ge intrinsic carrier values are based on Thurmond's paper: The Standard Thermodynamics Functions for the Formation of Electrons and Holes in Ge, Si, GaAs, and GaP
- GaAs intrinsic carrier values are based on Blakemore's paper: Semiconducting and other major properties of gallium arsenide
- For full details please see Chapter 5 of Streetman's and Banerjee's book " Solid State and Electronic Devices " Sixth Edition
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| Cite this work |
Researchers should cite this work as follows:
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| Tags |
- depletion 1
- depletion approximation 1
- long base 1
- nanoelectronics 1
- np 1
- np-junction 1
- pn 1
- pn-junction 1
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