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The NP Junction: Long-Base Depletion Approximation tool is used to approximately calculate, and then graph, the distribution in an n- and p-type junction of :
Charge Density Electric Field Intensity Electrostatic Potential Excess Carrier Concentration Current Density Current Density Amplitude Depletion Width Max Excess Hole Concentration Max Excess Electrons Concentration Junction Capacitance
- Si and Ge intrinsic carrier values are based on Thurmond's paper: The Standard Thermodynamics Functions for the Formation of Electrons and Holes in Ge, Si, GaAs, and GaP
- GaAs intrinsic carrier values are based on Blakemore's paper: Semiconducting and other major properties of gallium arsenide
- For full details please see Chapter 5 of Streetman's and Banerjee's book " Solid State and Electronic Devices " Sixth Edition
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