NP Junction: Short-Base Depletion Approximation

By Nahil Sobh1, Mohamed Mohamed1

1. University of Illinois at Urbana-Champaign

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Archive Version 1.0
Published on 21 Aug 2008, unpublished on 08 Sep 2008
Latest version: 2.0a. All versions

doi:10.4231/D3N00ZS8S cite this

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Abstract

This model is valid under the assumption that the width of the p-region is sufficiently small so that injected minority carriers diffuse to the metal contact before recombining with majority carriers. ( Depletion Width << Diffusion Length ) The NP Junction: Short-Base Depletion Approximation tool is used to approximately calculate, and then graph, the distribution in an n- and p-type junction of : - Charge Density - Electric Field Intensity - Electrostatic Potential - Excess Carrier Concentration - Current Density - Current Density Amplitude - Depletion Width - Max Excess Hole Concentration - Max Excess Electrons Concentration - Junction Capacitance - 1 / C^2

References

For full details please see Chapter 5 of Streetman's and Banerjee's book " Solid State and Electronic Devices " Sixth Edition.

Cite this work

Researchers should cite this work as follows:

  • Nahil Sobh; Mohamed Mohamed (2014), "NP Junction: Short-Base Depletion Approximation," http://nanohub.org/resources/npshortbasedda. (DOI: 10.4231/D3N00ZS8S).

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