nanoHUB.org

Category	Tools
Abstract	This model is valid under the assumption that the width of the n-region is sufficiently small so that injected minority carriers diffuse to the metal contact before recombining with majority carriers. ( Depletion Width << Diffusion Length ) The PN Junction: Short-Base Depletion Approximation tool is used to approximately calculate, and then graph, the distribution in an p- and n-type junction of : Charge Density Electric Field Intensity Electrostatic Potential Excess Carrier Concentration Current Density Current Density Amplitude Depletion Width Max Excess Hole Concentration Max Excess Electrons Concentration Junction Capacitance 1 / C^2
References	Si and Ge intrinsic carrier values are based on Thurmond's paper: The Standard Thermodynamics Functions for the Formation of Electrons and Holes in Ge, Si, GaAs, and GaP GaAs intrinsic carrier values are based on Blakemore's paper: Semiconducting and other major properties of gallium arsenide For full details please see Chapter 5 of Streetman's and Banerjee's book " Solid State and Electronic Devices " Sixth Edition
Cite this work	Researchers should cite this work as follows: Nahil Sobh; Mohamed Mohamed (2009), "PN Junction Short-Base Depletion Approximation," http://nanohub.org/resources/pnshortbasedda. (DOI: 10254/nanohub-r5124.3). BibTex \| EndNote
Tags	depletion 1 depletion approximation 1 nanoelectronics 1 np 1 np-junction 1 pn 1 pn-junction 1 short base 1

Navigation

No results found.