On Monday July 6th, the nanoHUB will be intermittently unavailable due to scheduled maintenance. We apologize for any inconvenience this may cause. close

Support

Support Options

Submit a Support Ticket

 

PN Junction Short-Base Depletion Approximation

By Nahil Sobh1, Mohamed Mohamed1

1. University of Illinois at Urbana-Champaign

Tool Description

Launch Tool

This tool version is unpublished and cannot be run. If you would like to have this version staged, you can put a request through HUB Support.

Archive Version 2.5
Published on 15 Jan 2009
Latest version: 2.5a. All versions

doi:10.4231/D3XS5JG7M cite this

This tool is closed source.

Category

Tools

Published on

Abstract

This model is valid under the assumption that the width of the n-region is sufficiently small so that injected minority carriers diffuse to the metal contact before recombining with majority carriers. ( Depletion Width

References

  • Si and Ge intrinsic carrier values are based on Thurmond's paper: The Standard Thermodynamics Functions for the Formation of Electrons and Holes in Ge, Si, GaAs, and GaP
  • GaAs intrinsic carrier values are based on Blakemore's paper: Semiconducting and other major properties of gallium arsenide
  • For full details please see Chapter 5 of Streetman's and Banerjee's book " Solid State and Electronic Devices " Sixth Edition

Cite this work

Researchers should cite this work as follows:

  • Nahil Sobh; Mohamed Mohamed (2014), "PN Junction Short-Base Depletion Approximation," http://nanohub.org/resources/pnshortbasedda. (DOI: 10.4231/D3XS5JG7M).

    BibTex | EndNote

Tags

nanoHUB.org, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.