PN Junction: Short-Base Depletion Approximation

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Archive Version 1.0
Published on 20 Aug 2008, unpublished on 08 Sep 2008 All versions

doi:10.4231/D3513TV5Q cite this

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Abstract

This model is valid under the assumption that the width of the n-region is sufficiently small so that injected minority carriers diffuse to the metal contact before recombining with majority carriers. ( Depletion Width << Diffusion Length ) The PN Junction: Short-Base Depletion Approximation tool is used to approximatley calculate, and then graph, the distribution in an p- and n-type junction of : - Charge Density - Electric Field Intensity - Electrostatic Potential - Excess Carrier Concentration - Current Density - Current Density Amplitute - Depeletion Width - Max Excess Hole Concentration - Max Excess Electrons Concentration - Junction Capacitance - 1 / C^2 For full details please see Chapter 5 of Streetman's and Banerjee's book " Solid State and Electronic Devices " Sixth Edition.

Cite this work

Researchers should cite this work as follows:

  • Nahil Sobh, Mohamed Mohamed (2014), "PN Junction: Short-Base Depletion Approximation," https://nanohub.org/resources/pnshortbasedda. (DOI: 10.4231/D3513TV5Q).

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Tags

  1. depletion
  2. depletion approximation
  3. educational tool
  4. nanoelectronics
  5. np
  6. np-junction
  7. pn
  8. pn-junction
  9. short base