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Uniform versus delta doping in 1D heterostructures: an Exercise

By Dragica Vasileska1, Gerhard Klimeck2

1. Arizona State University 2. Purdue University

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Abstract

This exercise is designed to demonstrate that delta doping leads to larger sheet electron density in the channel and it also allows for better control of the charge density in the channel region of High Electron Mobility Transistors (HEMTs).

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Researchers should cite this work as follows:

  • Dragica Vasileska; Gerhard Klimeck (2008), "Uniform versus delta doping in 1D heterostructures: an Exercise," http://nanohub.org/resources/5231.

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