This exercise uses the 1-D Heterostructure Lab, which demonstrates that adding more dopants in the buffer layer becomes ineffective after certain critical doping density. Beyond this critical doping density, additional dopants practically fill in the parallel conduction channel that sits in the AlGaAs layer in which carriers have significantly lower mobility due to alloy scattering.

Researchers should cite this work as follows:

• Dragica Vasileska, Gerhard Klimeck (2008), "Parallel Conduction Channel: an Exercise for 1D Heterostructure Lab," https://nanohub.org/resources/5233.

  BibTex | EndNote

1. 1D heterostructures
2. ACUTE
3. AQME
4. nanoelectronics