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Resonant Tunneling Diode Simulation with NEGF

By Samarth Agarwal1, Mathieu Luisier2, Michael McLennan2, Gerhard Klimeck2

1. IBM 2. Purdue University

Simulate 1D RTDs using NEGF.

Launch Tool

This tool version is unpublished and cannot be run. If you would like to have this version staged, you can put a request through HUB Support.

Archive Version 1.0.2
Published on 24 Sep 2008, unpublished on 30 Sep 2008
Latest version: 2.1.2. All versions

doi:10.4231/D3QN5ZB05 cite this

This tool is closed source.



Published on


Simulate transport in RTDs using the Non-equilibrium Green’s Function method. The simulation methodology is following the concepts of the NEMO 1-D simulation tool.

The embedded single band physics is decribed in detail in the Applied Physics Letters citation listed below.

Features: three different potential models: linear potential drop, semi-classical Thomas Fermi potential, and Hartree quantum charge-selfconsistent potential. relaxation in the reservoirs incorporated through a simple relaxation model. automatic determination of the AlGaAs barrier height.

  • barrier and multi-barrier devices.

    Prof. Datta is providing information on the NEGF formalism and its applications in a designated Topics page with tutorials, research seminars, research publications, Ph.D. theses, and simulation tools. To understand the critical elements of the boundary conditions that treat the relaxation in the reservoirs we recommend that users read through the following publication. Quantum Device Simulation with a Generalized Tunneling Formula, Gerhard Klimeck, Roger K. Lake, R. Chris Bowen, William R. Frensley and Ted Moise, Appl. Phys. Lett., Vol. 67, p.2539 (1995).

    This RTD tool uses some of the concepts of the NEMO 1-D simulation tool. Unfortunately we cannot release NEMO 1-D as such on the nanoHUB and we are in the process of recreating some of its capabilities here. The first release of this nanoHUB tool has some severe limitations compared to NEMO 1-D. A more comprehensive understanding of the NEMO 1-D simulation capabilities can be gained from reading the following publications:

    Quantitative Resonant Tunneling Diode Simulation, R. Chris Bowen, Gerhard Klimeck, Roger Lake, William R. Frensley and Ted Moise, J. of Appl. Phys., Vol. 81, 3207 (1997). Single and multiband modeling of quantum electron transport through layered semiconductor devices, Roger Lake, Gerhard Klimeck, R. Chris Bowen and Dejan Jovanovic, J. of Appl. Phys., Vol. 81, 7845 (1997).

    Tool Limitations: single effective mass model, no sophisticated multiband models; no transverse momentum integration; no exchange and correlation potential; GaAs / AlGaAs material system; no material parameters are exposed to the users for possible changes

    Known issues with this release: transmission peaks may not be well resolved for thick barriers – observed for 7nm barriers. resonances are identified only by peaks in the transmission. There is no true spatial resolution and resonances in the triangular emitter well might be identified as central device resonance.

    Speed-up of the code Certain portions of the Recursive Green Function previously written in MATLAB have been replaced with C code.

  • Tags, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.