This tool version is unpublished and cannot be run. If you would like to have this version staged, you can put a request through HUB Support.
- three different potential models:
- linear potential drop,
- semi-classical Thomas Fermi potential, and
- Hartree quantum charge-selfconsistent potential.
- relaxation in the reservoirs incorporated through a simple relaxation model.
- automatic determination of the AlGaAs barrier height.
- 2-barrier and multi-barrier devices.
Upgrades from previous versions:
- Computational speed dramatically improved through computations in C rather than Matlab. Computation times for a single bias point are now down to about 1 second compared to several minutes. Matlab is notoriously bad in "for" loops, but the RGF (Recursive Green Function algorithm) cannot be vectorized in a matlab friendly fashion. So a lower-most C call was implemented that now performs the RGF for many energies in C.
- Current density plots as a function of energy are added to the outputs. They are also augmented by a normalized running integral, which helps to identify, "where" in energy the current contributions are.
- The adaptive grid is now set to be more selective and appears to resolve very narrow resonances much better.
- A possible non-convergence has been avoided by setting an upper bound for the energy nodes that can be added by the adaptive grid.
- Local Density of states and energy resolved charge profile plots have now been added.
- A possible discrepancy between the quantum and semi-classical charge at the boundaries has been corrected. This discrepancy occurred at very small decay lengths of the optical potential.
- Quantum Device Simulation with a Generalized Tunneling Formula, Gerhard Klimeck, Roger K. Lake, R. Chris Bowen, William R. Frensley and Ted Moise, Appl. Phys. Lett., Vol. 67, p.2539 (1995).
- Quantitative Resonant Tunneling Diode Simulation, R. Chris Bowen, Gerhard Klimeck, Roger Lake, William R. Frensley and Ted Moise, J. of Appl. Phys., Vol. 81, 3207 (1997).
- Single and multiband modeling of quantum electron transport through layered semiconductor devices, Roger Lake, Gerhard Klimeck, R. Chris Bowen and Dejan Jovanovic, J. of Appl. Phys., Vol. 81, 7845 (1997).
- single effective mass model, no sophisticated multiband models;
- no transverse momentum integration;
- no exchange and correlation potential;
- GaAs / AlGaAs material system;
- no material parameters are exposed to the users for possible changes
Known issues with this release:
- resonances are identified only by peaks in the transmission. There is no true spatial resolution and resonances in the triangular emitter well might be identified as central device resonance.