Physics of Nanoscale MOSFETs
Audio podcast
Video podcast
Slides/Notes podcast
Licensed according to this deed.
Recommendations
- Introduction: Physics of Nanoscale MOSFETs
- Physics of Nanoscale Transistors: An Introduction to Electronics from the Bottom Up
- Illinois Physics 498: Introduction to Biological Physics
- MOSFet
- Device Physics and Simulation of Silicon Nanowire Transistors
- Computational Nanoscience, Lecture 3: Computing Physical Properties
- Device Physics and Simulation of Silicon Nanowire Transistors
| Lecture Number/Topic | Online Lecture | Video | Lecture Notes | Supplemental Material | Suggested Exercises |
|---|---|---|---|---|---|
| Introduction: Physics of Nanoscale MOSFETs | View Flash | View | Notes | ||
| Lecture 1: Review of MOSFET Fundamentals A quick review of the traditional theory of the MOSFET along with a review of key device performance metrics. A short discussion of the limits of the traditional (drift-diffusion) approach and the … |
View Flash | View | Notes | Exercises | |
| Lecture 2: Elementary Theory of the Nanoscale MOSFET A very simple (actually overly simple) treatment of the nanoscale MOSFET. This lecture conveys the essence of the approach using only simple mathematics. It sets the stage for the subsequent … |
View Flash | View | Notes | Exercises | |
| Lecture 3A: The Ballistic MOSFET The IV characteristic of the ballistic MOSFET is formally derived. When Boltzmann statistics are assumed, the model developed here reduces to the one presented in Lecture 2. There is no new physics … |
View Flash | View | Notes | Exercises | |
| Lecture 3B: The Ballistic MOSFET This lecture is a continuation of part 3A. After discussion some bandstructure considerations, it describes how 2D and subthreshold electrostatics are included in the ballistic model. |
View Flash | View | Notes | Exercises | |
| Lecture 4: Scattering in Nanoscale MOSFETs No MOSFET is ever fully ballistic - there is always some carrier scattering. Scattering makes the problem complicated and requires detailed numerical simulations to treat properly. My objective in … |
View Flash | View | Notes | Exercises | |
| Lecture 5: Application to State-of-the-Art FETs The previous lessons may seem a bit abstract and mathematical. To see how this all works, we examine measured data and show how the theory presented in the previous lessons help us understand the … |
View Flash | View | Notes | Exercises | |
| Lecture 6: Quantum Transport in Nanoscale FETs The previous lessons developed an analytical (or almost analytical) theory of the nanoscale FET, but to properly treat all the details, rigorous computer simulations are necessary. This lecture … |
View Flash | View | Notes | ||
| Lecture 7: Connection to the Bottom Up Approach While the previous lectures have been in the spirit of the bottom up approach, they did not follow the generic device model of Datta. In this lecture, the ballistic MOSFET theory will be formally … |
View Flash | View | Notes | ||
| Notes on Fermi-Dirac Integrals (3rd Edition) Fermi-Dirac integrals appear frequently in semiconductor problems, so an understanding of their properties is essential. The purpose of these notes is to collect in one place, some basic information … |
notes_on_FD_integral3rdEd_revised_080411.pdf fd_integral_matlab.zip |