[Audio] Physics of Nanoscale MOSFETsTransistor scaling has pushed channel lengths to the nanometer regime where traditional approaches to MOSFET device physics are less and less suitable This short course describes a way of understanding MOSFETs that is much more suitable than traditional approaches when the channel lengths are of nanoscale dimensions. lecture 1 reviews traditional MOSFET theory, and Lecture 2 presents the new approach in its simplest form. Lectures 3A and 3B describe the mathematical treatment of ballistic …
http://nanohub.org/resources/5306
Sat, 07 Mar 2015 04:21:25 +0000HUBzero - The open source platform for scientific and educational collaborationTransistor scaling has pushed channel lengths to the nanometer regime where traditional approaches to MOSFET device physics are less and less suitable This short course describes a way of understanding MOSFETs that is much more suitable than traditional approaches when the channel lengths are of nanoscale dimensions. lecture 1 reviews traditional MOSFET theory, and Lecture 2 presents the new approach in its simplest form. Lectures 3A and 3B describe the mathematical treatment of ballistic …nanoHUB.orgsupport@nanohub.orgnoballistic MOSFET, ballistic transport, bottom up approach, drift-diffusion, MOSFET, nanoelectronics, nanotransistors, short course, transistorsMark Lundstromen-gbCopyright 2015 nanoHUB.orgResourcesLecture 2: Elementary Theory of the Nanoscale MOSFET
http://nanohub.org/resources/5308
A very simple (actually overly simple) treatment of the nanoscale MOSFET. This lecture conveys the essence of the approach using only simple mathematics. It sets the stage for the subsequent lectures.A very simple (actually overly simple) treatment of the nanoscale MOSFET. This lecture conveys the essence of the approach using only simple mathematics. It sets the stage for the subsequent lectures.nochuckmay46, course lecture, dev/funded by NCN@Purdue, from Purdue, hosted/taped by NCN@Purdue, MOSFET, nanoelectronics, nanotransistors, transistorsMark LundstromMark LundstromOnline PresentationsMon, 08 Sep 2008 23:01:52 +0000/http://nanohub.org/site/resources/2008/09/05377/2008.07.21-l2-lundstrom.mp3Introduction: Physics of Nanoscale MOSFETs
http://nanohub.org/resources/5317
nodev/funded by NCN@Purdue, from Purdue, hosted/taped by NCN@Purdue, MOSFET, nanoelectronics, nanotransistors, transistorsMark LundstromMark LundstromOnline PresentationsWed, 27 Aug 2008 02:32:17 +0000/http://nanohub.org/site/resources/2008/08/05337/2008.07.21-intro-lundstrom.mp3Lecture 6: Quantum Transport in Nanoscale FETs
http://nanohub.org/resources/5313
The previous lessons developed an analytical (or almost analytical) theory of the nanoscale FET, but to properly treat all the details, rigorous computer simulations are necessary. This lecture presents quantum transport simulations that display the internal physics of nanoscale MOSFETs. We use these results to elucidate the physics discussed in previous lessons and to identify issues that still need to be clarified.The previous lessons developed an analytical (or almost analytical) theory of the nanoscale FET, but to properly treat all the details, rigorous computer simulations are necessary. This lecture presents quantum transport simulations that display the internal physics of nanoscale MOSFETs. We use these results to elucidate the physics discussed in previous lessons and to identify issues that still need to be clarified.nocourse lecture, dev/funded by NCN@Purdue, FET, from Purdue, hosted/taped by NCN@Purdue, nanoelectronics, nanotransistors, quantum transport, transistors, transport/quantumMark LundstromMark LundstromOnline PresentationsSat, 13 Sep 2008 02:19:41 +0000/http://nanohub.org/site/resources/2008/09/05438/2008.07.24-l6-lundstrom.mp3Lecture 3A: The Ballistic MOSFET
http://nanohub.org/resources/5309
The IV characteristic of the ballistic MOSFET is formally derived. When Boltzmann statistics are assumed, the model developed here reduces to the one presented in Lecture 2. There is no new physics in this lecture - just a proper mathematical derivation of the approach that was developed intuitively in Lecture 2.The IV characteristic of the ballistic MOSFET is formally derived. When Boltzmann statistics are assumed, the model developed here reduces to the one presented in Lecture 2. There is no new physics in this lecture - just a proper mathematical derivation of the approach that was developed intuitively in Lecture 2.noballistic MOSFET, ballistic transport, course lecture, dev/funded by NCN@Purdue, from Purdue, hosted/taped by NCN@Purdue, MOSFET, nanoelectronics, nanotransistors, transistorsMark LundstromMark LundstromOnline PresentationsWed, 10 Sep 2008 21:36:05 +0000/http://nanohub.org/site/resources/2008/09/05395/2008.07.22-l3a-lundstrom.mp3Lecture 1: Review of MOSFET Fundamentals
http://nanohub.org/resources/5307
A quick review of the traditional theory of the MOSFET along with a review of key device performance metrics. A short discussion of the limits of the traditional (drift-diffusion) approach and the meaning of ballistic transport is also included.A quick review of the traditional theory of the MOSFET along with a review of key device performance metrics. A short discussion of the limits of the traditional (drift-diffusion) approach and the meaning of ballistic transport is also included.noballistic MOSFET, course lecture, dev/funded by NCN@Purdue, drift-diffusion, from Purdue, hosted/taped by NCN@Purdue, MOSFET, nanoelectronics, nanotransistors, transistorsMark LundstromMark LundstromOnline PresentationsTue, 26 Aug 2008 19:32:50 +0000/http://nanohub.org/site/resources/2008/08/05332/2008.07.21-l1-lundstrom.mp3Lecture 4: Scattering in Nanoscale MOSFETs
http://nanohub.org/resources/5311
No MOSFET is ever fully ballistic - there is always some carrier scattering. Scattering makes the problem complicated and requires detailed numerical simulations to treat properly. My objective in this lecture is to present a simple, physical picture that describes the essence of the problem and that allows us to interpret the results of detailed simulations.No MOSFET is ever fully ballistic - there is always some carrier scattering. Scattering makes the problem complicated and requires detailed numerical simulations to treat properly. My objective in this lecture is to present a simple, physical picture that describes the essence of the problem and that allows us to interpret the results of detailed simulations.noballistic MOSFET, course lecture, dev/funded by NCN@Purdue, from Purdue, hosted/taped by NCN@Purdue, MOSFET, nanoelectronics, nanotransistors, scattering, transistorsMark LundstromMark LundstromOnline PresentationsMon, 08 Sep 2008 23:01:52 +0000/http://nanohub.org/site/resources/2008/09/05381/2008.07.23-l4-lundstrom.mp3Lecture 3B: The Ballistic MOSFET
http://nanohub.org/resources/5310
This lecture is a continuation of part 3A. After discussion some bandstructure considerations, it describes how 2D and subthreshold electrostatics are included in the ballistic model. This lecture is a continuation of part 3A. After discussion some bandstructure considerations, it describes how 2D and subthreshold electrostatics are included in the ballistic model. noballistic MOSFET, ballistic transport, course lecture, dev/funded by NCN@Purdue, from Purdue, hosted/taped by NCN@Purdue, MOSFET, nanoelectronics, nanotransistors, transistorsMark LundstromMark LundstromOnline PresentationsWed, 10 Sep 2008 21:36:05 +0000/http://nanohub.org/site/resources/2008/09/05390/2008.07.22-l3b-lundstrom.mp3Lecture 5: Application to State-of-the-Art FETs
http://nanohub.org/resources/5312
The previous lessons may seem a bit abstract and mathematical. To see how this all works, we examine measured data and show how the theory presented in the previous lessons help us understand the operation of modern FETs.The previous lessons may seem a bit abstract and mathematical. To see how this all works, we examine measured data and show how the theory presented in the previous lessons help us understand the operation of modern FETs.noballistic MOSFET, course lecture, dev/funded by NCN@Purdue, from Purdue, hosted/taped by NCN@Purdue, MOSFET, nanoelectronics, nanotransistors, transistors, transmission coefficientMark LundstromMark LundstromOnline PresentationsMon, 08 Sep 2008 23:01:52 +0000/http://nanohub.org/site/resources/2008/09/05385/2008.07.23-l5-lundstrom.mp3Lecture 7: Connection to the Bottom Up Approach
http://nanohub.org/resources/5314
While the previous lectures have been in the spirit of the bottom up approach, they did not follow the generic device model of Datta. In this lecture, the ballistic MOSFET theory will be formally derived from the generic model for a nano-device to show the connection explicitly.While the previous lectures have been in the spirit of the bottom up approach, they did not follow the generic device model of Datta. In this lecture, the ballistic MOSFET theory will be formally derived from the generic model for a nano-device to show the connection explicitly.nobottom up approach, course lecture, density of states, dev/funded by NCN@Purdue, from Purdue, hosted/taped by NCN@Purdue, MOSFET, nanoelectronics, nanotransistors, transistorsMark LundstromMark LundstromOnline PresentationsTue, 23 Sep 2008 22:38:41 +0000/http://nanohub.org/site/resources/2008/09/05474/2008.07.24-l7-lundstrom.mp3