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Lecture 4: Scattering in Nanoscale MOSFETs

By Mark Lundstrom

Purdue University

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Licensed under Creative Commons according to this deed.

Category Online Presentations
Abstract No MOSFET is ever fully ballistic - there is always some carrier scattering. Scattering makes the problem complicated and requires detailed numerical simulations to treat properly. My objective in this lecture is to present a simple, physical picture that describes the essence of the problem and that allows us to interpret the results of detailed simulations.
Sponsored by

NCN@Purdue Summer School 2008
National Science Fondation
Intel Corporation

Cite this work

Researchers should cite this work as follows:

  • Mark Lundstrom (2008), "Lecture 4: Scattering in Nanoscale MOSFETs," http://nanohub.org/resources/5311.

    BibTex | EndNote

Time 09:30 AM, July 23, 2008
Location Purdue University, West Lafayette, IN
Tags
  1. ballistic MOSFET
  2. course lecture
  3. MOSFET
  4. nanoelectronics
  5. nanotransistors
  6. scattering
  7. transistors

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