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ECE 612: Nanoscale Transistors (Fall 2008)

By Mark Lundstrom

Purdue University

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Courses

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Abstract

Additional material related to the topics discussed in this course course is available at https://nanohub.org/courses/NT

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Fall 2008

This course examines the device physics of advanced transistors and the process, device, circuit, and systems considerations that enter into the development of new integrated circuit technologies. The course consists of three parts. Part 1 treats silicon MOS and MOSFET fundamentals as well as second order effects such as gate leakage and quantum mechanical effects. Short channel effects, device scaling, and fabrication processes and reliability are the subject of Part 2. In Part 3, we discuss circuit and systems issues and then examine strained silicon, III-V HEMTs, and nanowire transistors. The use of computer simulation to examine device issues is an integral part of the course.

Syllabus:
2008/08/05328/ece612-f08-syllabus.pdf

Text:

Fundamentals of Modern VLSI Devices,
Yuan Taur and Tak H. Ning, Cambridge Univ. Press
ISBN: 0 521 55056 4 (hardback) 0 521 55959 6 (paperback)

Advanced Semiconductor Fundamentals, 2nd Edition
R.F. Pierret, Prentice Hall, ISBN 0-13-061792-X

 

Cite this work

Researchers should cite this work as follows:

  • Mark Lundstrom (2008), "ECE 612: Nanoscale Transistors (Fall 2008)," http://nanohub.org/resources/5328.

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Lecture Number/Topic Online Lecture Video Lecture Notes Supplemental Material Suggested Exercises
ECE 612 Introductory Lecture View Flash View Notes
ECE 612 Lecture 1: 1D MOS Electrostatics I View Flash View Notes
ECE 612 Lecture 2: 1D MOS Electrostatics II View Flash View Notes
ECE 612 Lecture 3: MOS Capacitors View Flash View Notes
ECE 612 Lecture 4: Polysilicon Gates/QM Effects View Flash View Notes
ECE 612 Lecture 5: MOSFET IV: Square law and bulk charge View Flash View Notes
ECE 612 Lecture 6: MOSFET IV: Velocity saturation View Flash View Notes
ECE 612 Lecture 7: Scattering Theory of the MOSFET I View Flash View Notes
ECE 612 Lecture 8: Scattering Theory of the MOSFET II View Flash View Notes
ECE 612 Lecture 9: Subthreshold Conduction View this lecture
ECE 612 Lecture 10: Threshold Voltage and MOSFET Capacitances View this lecture
ECE 612 Lecture 11: Effective Mobility View Flash View Notes
ECE 612 Lecture 12: 2D Electrostatics View Flash View Notes
ECE 612 Lecture 14: VT Engineering View Flash View Notes
ECE 612 Lecture 15: Series Resistance (and effective channel length) View Flash View Notes
ECE 612 Lecture 16: MOSFET Leakage View Flash View Notes
ECE 612 Lecture 17: Gate Resistance and Interconnects View Flash View Notes
ECE 612 Lecture 18A: CMOS Process Steps View Flash View
ECE 612 Lecture 18B: CMOS Process Flow View Flash View Notes
ECE 612 Lecture 19: Device Variability View Flash View Notes
ECE 612 Lecture 20: Broad Overview of Reliability of Semiconductor MOSFET View Flash View Notes
Guest lecturer: Muhammad A. Alam.

ECE 612 Lecture 21: On Becoming a True Technology Developer View Flash View Notes
ECE 612 Lecture 22: CMOS Circuit Essentials View Flash View Notes
ECE 612 Lecture 23: RF CMOS View Flash View Notes
ECE 612 Lecture 25: SOI Electrostatics View Flash View Notes
ECE 612 Lecture 26: Heterostructure FETs View Flash View Notes
ECE 612 Lecture 27: Heterojunction Bipolar Transistors View Flash View Notes

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