These notes are intended to complement the discussion on pp. 63 – 68 in Fundamentals of Modern VLSI Devices by Yuan Taur and Tak H. Ning . (Another good reference is Semiconductor Device Fundamentals by R.F. Pierret .) The objective is to understand how to treat MOS electrostatics without making the δ-depletion approximation.
Used in ECE 612 Nanoscale Transistors
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