Notes on the Solution of the Poisson-Boltzmann Equation for MOS Capacitors and MOSFETs, 2nd Edition
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Abstract
These notes are intended to complement the discussion on pp. 63 – 68 in Fundamentals
of Modern VLSI Devices by Yuan Taur and Tak H. Ning [1]. (Another good reference is
Semiconductor Device Fundamentals by R.F. Pierret [2].) The objective is to understand how to
treat MOS electrostatics without making the δ-depletion approximation.
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Used in ECE 612 Nanoscale Transistors
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