Support

Support Options

Submit a Support Ticket

 
You are here: Resources › Teaching Materials › Notes on the Solution of the Poisson-Boltzmann … › About
This resource has a 9.9 Ranking

Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›

Usage Stats
Total: updated 01 Aug, 2010
Users: 559
Reviews & Citations
Google/IEEE
Avg. Review: 0.0 out of 5 stars
Citations: 0

0 review(s) (Review this)

0 Citation(s)

Notes on the Solution of the Poisson-Boltzmann Equation for MOS Capacitors and MOSFETs

By Mark Lundstrom

Purdue University

These notes are intended to complement the discussion on pp. 63 – 68 in Fundamentals of Modern VLSI Devices by Yuan Taur and Tak H. Ning [1]. (Another good reference is Semiconductor Device Fundamentals by R.F. Pierret [2].) The objective is …

Download (PDF)

See also

No results found.

Abstract These notes are intended to complement the discussion on pp. 63 – 68 in Fundamentals of Modern VLSI Devices by Yuan Taur and Tak H. Ning [1]. (Another good reference is Semiconductor Device Fundamentals by R.F. Pierret [2].) The objective is to understand how to treat MOS electrostatics without making the δ-depletion approximation.
Credits Used in ECE 612 Nanoscale Transistors
Cite this work

Researchers should cite this work as follows:

  • Mark Lundstrom (2008), "Notes on the Solution of the Poisson-Boltzmann Equation for MOS Capacitors and MOSFETs," http://nanohub.org/resources/5338.

    BibTex | EndNote

Tags
  1. from Purdue
  2. hosted/taped by NCN@Purdue

Supporting Docs

Get Help

Get Involved

Legal

nanoHUB.org is supported by the National Science Foundation and other funding agencies.