These notes are intended to complement the discussion on pp. 63 – 68 in Fundamentals
of Modern VLSI Devices by Yuan Taur and Tak H. Ning . (Another good reference is
Semiconductor Device Fundamentals by R.F. Pierret .) The objective is to understand how to
treat MOS electrostatics without making the δ-depletion approximation.
Researchers should cite this work as follows:
Mark Lundstrom; Xingshu Sun (2012), "Notes on the Solution of the Poisson-Boltzmann Equation for MOS Capacitors and MOSFETs, 2nd Edition," http://nanohub.org/resources/5338.