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As the size of semiconductor devices reduces to the nano-scale, great interests and concerns in the nanowire devices has arised among scientists and engineers. Even though the full quantum simulation in nanowire strucutre is computationally very expensive, OMEN Nanowire which is powered by OMEN(GreenSolver) makes it possible for people to simulate the nanowire structure in atomistic level using reasonable computational resources.
OMEN Nanowire uses OMEN under the hood to calculate the bandstructure and transport characteristics. The bandstructure is calculated in the semi-empirical tight-binding model and the transport characteristics is calculated in the NEGF formalism. The scattering boundary approach is used for efficient calculation of boundary conditions for integration of tight-binding model into transport code. OMEN is also a fully parallelized using message passing interface(MPI) for wave vectors in the bandstructure and energy grids in the transport. Great flexibility in OMEN Nanowire for device structure and simulation options allows users to simulate a circular or rectangular nanowire with or without strain effect. Advanced 1D, 2D or 3D output plots make it possible for users to pioneer the nanowire devices more scientifically.The tool is supported by a First Time User Guide.
Mahieu Luisier, et. al., Atomistic simulation of nanowires in the sp3d5s* tight-binding formalism : From boundary conditions to strain calculations, Physical Review B 74, 205323 ,2006
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