ECE 612 Lecture 14: VT Engineering
Category
Published on
Abstract
Outline: 1) VT Specification,
2) Uniform Doping,
3) Delta-function doping, xC = 0,
4) Delta-function doping, xC > 0,
5) Stepwise uniform,
6) Integral solution.
The doping profiles in modern MOSFETs are complex. Our goal is to develop an intuitive understanding of how non-uniform doping profiles affect the threshold voltage and 2D electrostatics.
The doping profiles in modern MOSFETs are complex. Our goal is to develop an intuitive understanding of how non-uniform doping profiles affect the threshold voltage and 2D electrostatics.
Cite this work
Researchers should cite this work as follows:
-
Mark Lundstrom (2008), "ECE 612 Lecture 14: VT Engineering," https://nanohub.org/resources/5670.
Time
Location
EE 117, Purdue University, West Lafayette, IN