ECE 612 Lecture 14: VT Engineering

By Mark Lundstrom

Purdue University

Published on

Abstract

Outline: 1) VT Specification, 2) Uniform Doping, 3) Delta-function doping, xC = 0, 4) Delta-function doping, xC > 0, 5) Stepwise uniform, 6) Integral solution.

The doping profiles in modern MOSFETs are complex. Our goal is to develop an intuitive understanding of how non-uniform doping profiles affect the threshold voltage and 2D electrostatics.

Cite this work

Researchers should cite this work as follows:

  • Mark Lundstrom (2008), "ECE 612 Lecture 14: VT Engineering," http://nanohub.org/resources/5670.

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Time

Location

EE 117, Purdue University, West Lafayette, IN

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