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The doping profiles in modern MOSFETs are complex. Our goal is to develop an intuitive understanding of how non-uniform doping profiles affect the threshold voltage and 2D electrostatics.
Researchers should cite this work as follows:
Mark Lundstrom (2008), "ECE 612 Lecture 14: VT Engineering," https://nanohub.org/resources/5670.
EE 117, Purdue University, West Lafayette, IN