ECE 612 Lecture 16: MOSFET Leakage

By Mark Lundstrom

Purdue University

Published on

Abstract

Outline: 1) MOSFET leakage components, 2) Band to band tunneling, 3) Gate-induced drain leakage, 4) Gate leakage, 5) Scaling and ITRS, 6) Summary.

Cite this work

Researchers should cite this work as follows:

  • Mark Lundstrom (2008), "ECE 612 Lecture 16: MOSFET Leakage," http://nanohub.org/resources/5688.

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Time

Location

EE 117, Purdue University, West Lafayette, IN

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