ECE 606: Principles of Semiconductor Devices
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| Abstract | In the last 50 years, solid state devices like transistors have evolved from an interesting laboratory experiment to a technology with applications in all aspects of modern life. Making transistors is a complex process that requires unprecedented collaboration among material scientists, solid state physicists, chemists, numerical analysts, and software professionals. And yet, as you will see in part 1 of this course (first 5 weeks), that the basics of current flow though solid state semiconductor devices can be understood by using some elementary concepts of quantum- and statistical-mechanics. In Part 2 (next 5 weeks), we will use this framework to analyze bipolar-transistors (Shockley, 1953). And in Part 3 (last 5 weeks), we will do the same for MOSFETs (Grove, 1967). Although much have changed in the last 30 years - transistors have gotten smaller, MEMS have become an important research area, and cross-disciplinary research in nano-bio-electronic systems is flourishing - yet the simple but powerful concepts that you will learn in this introductory course will still provide you the background and a reference point for all your future research work ( I will give you examples of such new applications as we go along).
Course Website Duscussion Q & A Website |
| Bio |  Professor Alam joined Purdue University as a faculty member of the Electrical and Computer Engineering Department in 2004 after spending nearly a decade in industry, first at Bell Labs and then at Agere Systems. His research interest involves physics of carrier transport in semiconductor devices, and he has worked on theory of electron transport models, quasi-ballistic transport in bipolar transistors, MOCVD and ALD crystal growth, laser dynamics, and most recent recently, on the theory of oxide reliability, transport in nanocomposite materials, and response of Nano-Bio sensors. |
| References | Kermit Sigmon, MATLAB Primer, Second Edition |
| Cite this work | Researchers should cite this work as follows:
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