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You are here: Home › Resources › Online Presentations › ECE 612 Lecture 26: Heterostructure FETs › About

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ECE 612 Lecture 26: Heterostructure FETs

By Mark Lundstrom

Purdue University

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See also

ECE 612: Nanoscale Transistors (Fall 2008)

Recommendations

Category	Online Presentations
Abstract	Outline: 1) Introduction, 2) Heterojunction review, 3) Modulation doping, 4) I-V characteristics, 5) Device Structure / Materials, 6) Summary.
Cite this work	Researchers should cite this work as follows: Mark Lundstrom (2008), "ECE 612 Lecture 26: Heterostructure FETs," http://nanohub.org/resources/6032. BibTex \| EndNote
Time	10:30 AM, December 09, 2008
Location	EE 117, Purdue University, West Lafayette, IN
Tags	ballistic MOSFET ballistic transport course lecture FET heterostructure MOSFET nanoelectronics nanostransistors transistors

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