Universality of NBTI-Induced Interface Trap Generation and Its Impact on ID Degradation in Strained/ Unstrained PMOS Transistors
| Category | Online Presentations |
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| Abstract | Despite extensive use of strained technology, it is still unclear whether NBTI-induced NIT generation in strained transistors is substantially different from that of unstrained ones. Here, we present a comprehensive theory for NIT generation in strained/unstrained transistors and show its universality over a wide range of strain. We further propose that an appropriately designed/optimized transistor might reduce/eliminate NBTI being a concern for CMOS scaling. |
| Credits | Brick Nanotechnology Center for Experiment Khaled Ahmed (Applied Materials) for Devices Souvik Mahapatra (IIT-Bombay) and Abu Naser Zainuddin (Purdue) for Discussions |
| Publications | A. E. Islam, J. H. Lee, W. H. Wu, A. Oates and M. A. Alam, "Universality of Interface Trap Generation and Its Impact on ID Degradation in Strained/Unstrained PMOS Devices During NBTI Stress," International Electron Devices Meeting (IEDM) 2008, pp. 107-110 |
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