M. Ashraful Alam Research Group
This resource belongs to the M. Ashraful Alam Research Group group.
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Despite extensive use of strained technology, it is still unclear whether NBTI-induced NIT generation in strained transistors is substantially different from that of unstrained ones. Here, we present a comprehensive theory for NIT generation in strained/unstrained transistors and show its universality over a wide range of strain. We further propose that an appropriately designed/optimized transistor might reduce/eliminate NBTI being a concern for CMOS scaling.
Khaled Ahmed (Applied Materials) for Devices
Souvik Mahapatra (IIT-Bombay) and Abu Naser Zainuddin (Purdue) for Discussions
Researchers should cite this work as follows:
; (2008), "Universality of NBTI-Induced Interface Trap Generation and Its Impact on ID Degradation in Strained/ Unstrained PMOS Transistors," https://nanohub.org/resources/6067.