Support

Support Options

Submit a Support Ticket

 
HomeGroupsM. Ashraful Alam Research GroupResourcesOnline PresentationsUniversality of NBTI-Induced Interface Trap Generation and Its Impact on ID Degradation in Strained/ Unstrained PMOS Transistors › Reviews

Universality of NBTI-Induced Interface Trap Generation and Its Impact on ID Degradation in Strained/ Unstrained PMOS Transistors

By Ahmad Ehteshamul Islam1, Muhammad Alam2

1. University of Illinois at Urbana-Champaign 2. Purdue University

nanoHUB.org, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies.